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芯片衰減器

最重要性能參數

處理(li)器(qi)衰(shuai)減(jian)器(qi),是至高的(de)(de)(de)250瓦(wa)，是至高的(de)(de)(de)18 GHz，細則衰(shuai)減(jian)器(qi)在(zai)(zai)全部的(de)(de)(de)室內濕度下勻稱(cheng)等地降(jiang)RF公率，而室內濕度可變性集(ji)成(cheng)塊設計為在(zai)(zai)高溫度下大于(yu)其衰(shuai)減(jian)，以提供(gong)了(le)信(xin)號燈調平軟(ruan)(ruan)(ruan)件軟(ruan)(ruan)(ruan)件要求(qiu)的(de)(de)(de)最適(shi)(shi)為了(le)響應。顆粒狀(zhuang)衰(shuai)減(jian)器(qi)適(shi)(shi)用(yong)于(yu)調小器(qi)集(ji)成(cheng)運放，收發器(qi)，上/下更換器(qi)，相位(wei)適(shi)(shi)合陣列和打開軟(ruan)(ruan)(ruan)件軟(ruan)(ruan)(ruan)件。表明要求(qiu)的(de)(de)(de)規格為，不(bu)錯在(zai)(zai)中帶薄或(huo)厚電(dian)阻值的(de)(de)(de)BeO，氮化鋁或(huo)腐(fu)蝕鋁瓷器(qi)上制造廠集(ji)成(cheng)塊。

品牌：MACOM

品牌情況簡介

處理芯片衰減器

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
1KNA250	250	1	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.375	0.040
	100	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.350	0.225	0.040
	150	1.9	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.250	0.040
2KNA250	250	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.500	0.500	0.040
3KNA100	100	3	AlN	Thin	G, Tabbed	N, T, H	0.375	0.250	0.040
	10	4	BeO	Thin	G	N, T, H	0.100	0.200	0.040
	100	0.5	BeO	Thin	G	N, T, H	0.500	0.500	0.40
	20	4	BeO	Thin	G	N, T, H	0.250	0.250	0.040
	50	1	BeO	Thin	G	N, T, H	0.375	0.375	0.040
	1.5	12.4	Alumina	Thin		N, T, H, G	0.125	0.150	0.010
	0.75	18	Alumina	Thin		N, T, H, G	0.060	0.075	0.010
	0.75	8	Alumina	Thin	F	N, T, H, G	0.060	0.075	0.010
	0.75	18	Alumina	Thin	Tabbed	G, T, H	0.060	0.075	0.040
	0.75	18	Alumina	Thin	W	N, T, H, G	0.060	0.075	0.010
	1.5	4	Alumina	Thin	F	N, T, H, G	0.125	0.150	0.010
	1.5	12.4	Alumina	Thin	Tabbed	G, T, H	0.125	0.150	0.040
	1.5	12.4	Alumina	Thin	W	N, T, H, G	0.125	0.150	0.010
	100	0.4	BeO	Thin	G	N, T, H	0.500	0.500	0.040